Combined nanoscale and device-level degradation analysis of SiO2 layers of MOS nonvolatile memory devices

Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, Alessandro Sebastiani, Gabriella Ghidini, Anna Vedda, M. Fasoli

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

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