Combinatorial screening of the effect of temperature on the microstructure and mobility of a high performance polythiophene semiconductor

Leah A. Lucas; Dean M. DeLongchamp; Brandon M. Vogel; Eric K. Lin; Michael J. Fasolka; Daniel A. Fischer; Iain McCulloch; Martin Heeney; Ghassan E. Jabbour

doi:10.1063/1.2404934

Combinatorial screening of the effect of temperature on the microstructure and mobility of a high performance polythiophene semiconductor

Leah A. Lucas, Dean M. DeLongchamp, Brandon M. Vogel, Eric K. Lin, Michael J. Fasolka, Daniel A. Fischer, Iain McCulloch, Martin Heeney, Ghassan E. Jabbour

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31 Scopus citations

Abstract

Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3- dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm2 V-1 s-1. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition. © 2007 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	90
Issue number	1
DOIs	https://doi.org/10.1063/1.2404934
State	Published - Jan 15 2007
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2404934

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title = "Combinatorial screening of the effect of temperature on the microstructure and mobility of a high performance polythiophene semiconductor",

abstract = "Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3- dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm2 V-1 s-1. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition. {\textcopyright} 2007 American Institute of Physics.",

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doi = "10.1063/1.2404934",

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AU - Lucas, Leah A.

AU - DeLongchamp, Dean M.

AU - Vogel, Brandon M.

AU - Lin, Eric K.

AU - Fasolka, Michael J.

AU - Fischer, Daniel A.

AU - McCulloch, Iain

AU - Heeney, Martin

AU - Jabbour, Ghassan E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2007/1/15

Y1 - 2007/1/15

N2 - Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3- dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm2 V-1 s-1. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition. © 2007 American Institute of Physics.

AB - Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3- dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3 cm2 V-1 s-1. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition. © 2007 American Institute of Physics.

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JF - Applied Physics Letters

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Combinatorial screening of the effect of temperature on the microstructure and mobility of a high performance polythiophene semiconductor

Abstract

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