Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses

Y. Shi; C. Pan; V. Chen; N. Raghavan; K. L. Pey; F. M. Puglisi; E. Pop; H. S.P. Wong; M. Lanza

doi:10.1109/IEDM.2017.8268333

Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses

Y. Shi, C. Pan, V. Chen, N. Raghavan, K. L. Pey, F. M. Puglisi, E. Pop, H. S.P. Wong, M. Lanza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

18 Scopus citations

Abstract

We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (/j-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer h-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.

Original language	English (US)
Title of host publication	Technical Digest - International Electron Devices Meeting, IEDM
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5.4.1-5.4.4
Number of pages	1
ISBN (Print)	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268333
State	Published - Jan 23 2018
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

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Shi, Y., Pan, C., Chen, V., Raghavan, N., Pey, K. L., Puglisi, F. M., Pop, E., Wong, H. S. P., & Lanza, M. (2018). Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 5.4.1-5.4.4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268333

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abstract = "We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (/j-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer h-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.",

author = "Y. Shi and C. Pan and V. Chen and N. Raghavan and Pey, {K. L.} and Puglisi, {F. M.} and E. Pop and Wong, {H. S.P.} and M. Lanza",

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doi = "10.1109/IEDM.2017.8268333",

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Shi, Y, Pan, C, Chen, V, Raghavan, N, Pey, KL, Puglisi, FM, Pop, E, Wong, HSP & Lanza, M 2018, Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses. in Technical Digest - International Electron Devices Meeting, IEDM. Institute of Electrical and Electronics Engineers Inc., pp. 5.4.1-5.4.4. https://doi.org/10.1109/IEDM.2017.8268333

TY - GEN

T1 - Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses

AU - Shi, Y.

AU - Pan, C.

AU - Chen, V.

AU - Raghavan, N.

AU - Pey, K. L.

AU - Puglisi, F. M.

AU - Pop, E.

AU - Wong, H. S.P.

AU - Lanza, M.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2018/1/23

Y1 - 2018/1/23

N2 - We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (/j-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer h-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.

AB - We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (/j-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer h-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.

UR - http://ieeexplore.ieee.org/document/8268333/

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DO - 10.1109/IEDM.2017.8268333

M3 - Conference contribution

SN - 9781538635599

SP - 5.4.1-5.4.4

BT - Technical Digest - International Electron Devices Meeting, IEDM

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses

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