Co-doped TiO2 epitaxial thin films grown by sputtering

G. C. Han*, P. Luo, Z. B. Guo, Fiaz Un Nahar, M. Tay, Y. H. Wu, S. J. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Co-doped TiO2 anatase thin films were epitaxially grown by sputtering. It is found that the films have good epitaxial structure and contain single anatase phase. Co in the films is in + 2 oxidation state. However, there are also pure metal Co clusters on the film surface. Saturation moments (m s) of films are found to be independent of carrier density, which implies that the carriers are unimportant for the ferromagnetism in these Co-doped TiO2 anatase films. Neither an anomalous Hall effect nor a characteristic magnetoresistance are observed even at a temperature down to 2.2 K, which indicates that Co-doped anatase films may not be an intrinsic magnetic semiconductor.

Original languageEnglish (US)
Pages (from-to)137-140
Number of pages4
JournalThin Solid Films
Issue number1-2
StatePublished - May 18 2006
Externally publishedYes


  • Anatase
  • Epitaxial growth
  • Magnetism
  • Sputtering
  • Titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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