Cl2-Doped CuSCN Hole Transport Layer for Organic and Perovskite Solar Cells with Improved Stability

Jian Wei Liang, Yuliar Firdaus, Randi Azmi, Hendrik Faber, Dimitrios Kaltsas, Chun Hong Kang, Mohamad Insan Nugraha, Emre Yengel, Tien Khee Ng, Stefaan De Wolf, Leonidas Tsetseris, Boon S. Ooi, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Copper(I) thiocyanate (CuSCN) is a wide bandgap and solution-processable p-type semiconductor with tremendous potential for large-area optoelectronic applications. In this work, chlorine-doped CuSCN (Cl2–CuSCN) was utilized to form a hole transport layer (HTL) for different organic solar cells (OSCs) and inverted perovskite solar cells (PSCs). Chlorine doping into CuSCN thin films is found to improve the device performance of different OSCs, to a level comparable to that of PEDOT:PSS-based OSCs. Notably, the inverted PSCs with Cl2–CuSCN showed a better performance than those with pristine CuSCN or PEDOT:PSS-based inverted PSC devices. Moreover, Cl2–CuSCN-based OSCs and PSCs also reveal significantly better stability than pristine CuSCN and PEDOT:PSS-based devices. Our results show how Cl2–CuSCN thin films act as a universally applicable HTL for emerging solar cell technologies, improving both device performance and stability.
Original languageEnglish (US)
Pages (from-to)3139-3148
Number of pages10
JournalACS Energy Letters
DOIs
StatePublished - Aug 30 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-09-14
Acknowledged KAUST grant number(s): BAS/1/1614-01-01, BAS/1/1389-01-01, OSR-2018-CARF/CCF-3079, OSR-2019-CRG8-4095
Acknowledgements: This research was supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, BAS/1/1389-01-01, and by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award Nos. OSR-2018-CARF/CCF-3079 and OSR-2019-CRG8-4095. This work was supported by the Electric Vehicle Program from the National Research and Innovation Agency (BRIN, no. 2/III/HK/2022). The authors further acknowledge access to the Nanofabrication Core Lab as well as the Nanofabrication Core Lab facilities at KAUST and access to the Device Fabrication Lab as well as the Device Fabrication Lab facilities in the Solar Center at KAUST. J.-W.L. thanks Mr. Ulrich Buttner for assistance in the training and use of the fabrication tools in the Nanofabrication Core Lab. D.K. and L.T. acknowledge support for the computational time granted from GRNET in the National HPC facility -ARIS - under project FRAME.

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