Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Jian Wei Liang; Yuliar Firdaus; Chun Hong Kang; Jung Wook Min; Jung Hong Min; Redha H. Al Ibrahim; Nimer Wehbe; Mohamed Nejib Hedhili; Dimitrios Kaltsas; Leonidas Tsetseris; Sergei Lopatin; Shuiqin Zheng; Tien Khee Ng; Thomas D. Anthopoulos; Boon S. Ooi

doi:10.1021/acsami.1c22075

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Jian Wei Liang, Yuliar Firdaus, Chun Hong Kang, Jung Wook Min, Jung Hong Min, Redha H. Al Ibrahim, Nimer Wehbe, Mohamed Nejib Hedhili, Dimitrios Kaltsas, Leonidas Tsetseris, Sergei Lopatin, Shuiqin Zheng, Tien Khee Ng, Thomas D. Anthopoulos^*, Boon S. Ooi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 1018 cm-3. The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 102% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.

Original language	English (US)
Pages (from-to)	17889-17898
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	14
Issue number	15
DOIs	https://doi.org/10.1021/acsami.1c22075
State	Published - Apr 20 2022

Bibliographical note

Funding Information:
This research was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), MBE equipment funding (C/M-20000-12-001-77), and MBE equipment funding (KCR/1/4055-01-01). JWM, TKN, and OBS gratefully acknowledge King Abdulaziz City for Science and Technology (KACST) for funding the Technology Innovation Center on Solid-State Lighting at KAUST under Grant no. KACST TIC R2-FP-008. The authors further acknowledge the Nanofabrication Core Lab, Imaging and Characterization Core Lab, as well as the Solar Center Device Fabrication Lab at KAUST. Part of this work was supported by King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award nos: OSR-2018-CARF/CCF-3079 and OSR-2019-CRG8-4095.3. The DFT calculations used computational time granted from GRNET in the National HPC facility, ARIS, under project 11013-CREATE.

Publisher Copyright:
© 2022 American Chemical Society.

Keywords

copper thiocyanate
gallium nitride
p-CuSCN/n-GaN heterojunction photodetector
ultraviolet-based photodetector
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.1c22075

Cite this

Liang, J. W., Firdaus, Y., Kang, C. H., Min, J. W., Min, J. H., Al Ibrahim, R. H., Wehbe, N., Hedhili, M. N., Kaltsas, D., Tsetseris, L., Lopatin, S., Zheng, S., Ng, T. K., Anthopoulos, T. D., & Ooi, B. S. (2022). Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors. ACS Applied Materials and Interfaces, 14(15), 17889-17898. https://doi.org/10.1021/acsami.1c22075

@article{8c818a4204c64f6f95f4f8de252fc4f0,

title = "Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors",

abstract = "Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 1018 cm-3. The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 102% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.",

keywords = "copper thiocyanate, gallium nitride, p-CuSCN/n-GaN heterojunction photodetector, ultraviolet-based photodetector, X-ray photoelectron spectroscopy",

author = "Liang, {Jian Wei} and Yuliar Firdaus and Kang, {Chun Hong} and Min, {Jung Wook} and Min, {Jung Hong} and {Al Ibrahim}, {Redha H.} and Nimer Wehbe and Hedhili, {Mohamed Nejib} and Dimitrios Kaltsas and Leonidas Tsetseris and Sergei Lopatin and Shuiqin Zheng and Ng, {Tien Khee} and Anthopoulos, {Thomas D.} and Ooi, {Boon S.}",

note = "Funding Information: This research was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), MBE equipment funding (C/M-20000-12-001-77), and MBE equipment funding (KCR/1/4055-01-01). JWM, TKN, and OBS gratefully acknowledge King Abdulaziz City for Science and Technology (KACST) for funding the Technology Innovation Center on Solid-State Lighting at KAUST under Grant no. KACST TIC R2-FP-008. The authors further acknowledge the Nanofabrication Core Lab, Imaging and Characterization Core Lab, as well as the Solar Center Device Fabrication Lab at KAUST. Part of this work was supported by King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award nos: OSR-2018-CARF/CCF-3079 and OSR-2019-CRG8-4095.3. The DFT calculations used computational time granted from GRNET in the National HPC facility, ARIS, under project 11013-CREATE. Publisher Copyright: {\textcopyright} 2022 American Chemical Society.",

year = "2022",

month = apr,

day = "20",

doi = "10.1021/acsami.1c22075",

language = "English (US)",

volume = "14",

pages = "17889--17898",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "15",

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Liang, JW, Firdaus, Y, Kang, CH, Min, JW, Min, JH, Al Ibrahim, RH , Wehbe, N , Hedhili, MN, Kaltsas, D, Tsetseris, L, Lopatin, S, Zheng, S, Ng, TK, Anthopoulos, TD & Ooi, BS 2022, 'Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors', ACS Applied Materials and Interfaces, vol. 14, no. 15, pp. 17889-17898. https://doi.org/10.1021/acsami.1c22075

TY - JOUR

T1 - Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

AU - Liang, Jian Wei

AU - Firdaus, Yuliar

AU - Kang, Chun Hong

AU - Min, Jung Wook

AU - Min, Jung Hong

AU - Al Ibrahim, Redha H.

AU - Wehbe, Nimer

AU - Hedhili, Mohamed Nejib

AU - Kaltsas, Dimitrios

AU - Tsetseris, Leonidas

AU - Lopatin, Sergei

AU - Zheng, Shuiqin

AU - Ng, Tien Khee

AU - Anthopoulos, Thomas D.

AU - Ooi, Boon S.

N1 - Funding Information: This research was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), MBE equipment funding (C/M-20000-12-001-77), and MBE equipment funding (KCR/1/4055-01-01). JWM, TKN, and OBS gratefully acknowledge King Abdulaziz City for Science and Technology (KACST) for funding the Technology Innovation Center on Solid-State Lighting at KAUST under Grant no. KACST TIC R2-FP-008. The authors further acknowledge the Nanofabrication Core Lab, Imaging and Characterization Core Lab, as well as the Solar Center Device Fabrication Lab at KAUST. Part of this work was supported by King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award nos: OSR-2018-CARF/CCF-3079 and OSR-2019-CRG8-4095.3. The DFT calculations used computational time granted from GRNET in the National HPC facility, ARIS, under project 11013-CREATE. Publisher Copyright: © 2022 American Chemical Society.

PY - 2022/4/20

Y1 - 2022/4/20

N2 - Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 1018 cm-3. The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 102% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.

AB - Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 1018 cm-3. The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 102% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.

KW - copper thiocyanate

KW - gallium nitride

KW - p-CuSCN/n-GaN heterojunction photodetector

KW - ultraviolet-based photodetector

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85128800620&partnerID=8YFLogxK

U2 - 10.1021/acsami.1c22075

DO - 10.1021/acsami.1c22075

M3 - Article

C2 - 35404567

AN - SCOPUS:85128800620

SN - 1944-8244

VL - 14

SP - 17889

EP - 17898

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 15

ER -

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Abstract

Bibliographical note

Keywords

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