Chemical vapor deposited MoS2 thin layers and their applications

K. K. Liu, Y. H. Lee, Y. C. Lin, J. K. Huang, X. Q. Zhang, T. W. Lin, L. J. Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Significant efforts have been devoted to prepare MoS2 thin layers, including scotch tape micromechanical exfoliation, intercalation assisted exfoliation, solution exfoliation, physical vapor deposition, hydrothermal synthesis, electrochemical synthesis, sulfurization of molybdenum oxides and thermolysis of the precursor containing Mo and S atoms. However, MoS2 tends to form zero-dimensional closed structures or one-dimensional nano-rod structures. The synthetic approach to obtain high quality and large-area MoS2 atomic thin layers is still rare. Here, we shall discuss several different approaches for synthesizing MoS2 thin sheets based on chemical vapor deposition. Spectroscopic and electrical properties of these films shall also be discussed.

Original languageEnglish (US)
Title of host publicationLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
PublisherElectrochemical Society Inc.
Pages61-63
Number of pages3
Edition6
ISBN (Print)9781607683544
DOIs
StatePublished - 2013
Externally publishedYes
EventSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number6
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Country/TerritoryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

ASJC Scopus subject areas

  • General Engineering

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