Chemical insight into origin of forming-free resistive random-access memory devices

X. Wu; Z. Fang; Kun Li; M. Bosman; N. Raghavan; X. Li; H. Y. Yu; N. Singh; G. Q. Lo; Xixiang Zhang; K. L. Pey

doi:10.1063/1.3645623

Chemical insight into origin of forming-free resistive random-access memory devices

X. Wu, Z. Fang, Kun Li, M. Bosman, N. Raghavan, X. Li, H. Y. Yu, N. Singh, G. Q. Lo, Xixiang Zhang, K. L. Pey

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

Original language	English (US)
Pages (from-to)	133504
Journal	Applied Physics Letters
Volume	99
Issue number	13
DOIs	https://doi.org/10.1063/1.3645623
State	Published - Sep 29 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3645623

https://repository.kaust.edu.sa/bitstream/10754/552822/1/1.3645623.pdf

Cite this

@article{dfa1717d2e6c4b8dbdf0ae68764669c7,

title = "Chemical insight into origin of forming-free resistive random-access memory devices",

abstract = "We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.",

author = "X. Wu and Z. Fang and Kun Li and M. Bosman and N. Raghavan and X. Li and Yu, {H. Y.} and N. Singh and Lo, {G. Q.} and Xixiang Zhang and Pey, {K. L.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2011",

month = sep,

day = "29",

doi = "10.1063/1.3645623",

language = "English (US)",

volume = "99",

pages = "133504",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Chemical insight into origin of forming-free resistive random-access memory devices

AU - Wu, X.

AU - Fang, Z.

AU - Li, Kun

AU - Bosman, M.

AU - Raghavan, N.

AU - Li, X.

AU - Yu, H. Y.

AU - Singh, N.

AU - Lo, G. Q.

AU - Zhang, Xixiang

AU - Pey, K. L.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2011/9/29

Y1 - 2011/9/29

N2 - We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

AB - We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

UR - http://hdl.handle.net/10754/552822

UR - http://scitation.aip.org/content/aip/journal/apl/99/13/10.1063/1.3645623

UR - http://www.scopus.com/inward/record.url?scp=80053509943&partnerID=8YFLogxK

U2 - 10.1063/1.3645623

DO - 10.1063/1.3645623

M3 - Article

SN - 0003-6951

VL - 99

SP - 133504

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Chemical insight into origin of forming-free resistive random-access memory devices

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this