Charge trapping memory with 2.85-nm Si-nanoparticles embedded in HfO2

N. El-Atab, B. B. Turgut, A. K. Okyay, A. Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al2O3/HfO2 oxides is studied. Using high frequency (1 MHz) C-Vgate measurements, the memory showed a large memory window at low program/erase voltages due to the charging of the Si-nanoparticles. The analysis of the C-V characteristics shows that mixed charges are being stored in the Si-nanoparticles where electrons get stored during the program operation while holes dominate in the Si-nanoparticles during the erase operation. Moreover, the retention characteristic of the memory is studied by measuring the memory hysteresis in time. The obtained retention characteristic (35.5% charge loss in 10 years) is due to the large conduction and valence band offsets between the Si-nanoparticles and the Al2O3/HfO2 tunnel oxide. The results show that band engineering is essential in future low-power non-volatile memory devices. In addition, the results show that Si-nanoparticles are promising in memory applications.

Original languageEnglish (US)
Title of host publicationNanotechnology General Session
EditorsO. M. Leonte
PublisherElectrochemical Society, Inc.
Number of pages5
ISBN (Electronic)9781607686637
StatePublished - 2015
Externally publishedYes
EventSymposium on Nanotechnology General Session - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


ConferenceSymposium on Nanotechnology General Session - 227th ECS Meeting
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

ASJC Scopus subject areas

  • General Engineering


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