Charge injection from indium-tin-oxide into a starburst amine and its implications for organic light-emitting diodes

Homer Antoniadis; Carsten Giebeler; Donal D.C. Bradley; Yasuhiko Shirota

Charge injection from indium-tin-oxide into a starburst amine and its implications for organic light-emitting diodes

Homer Antoniadis, Carsten Giebeler, Donal D.C. Bradley, Yasuhiko Shirota

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated the hole injection characteristics from indium tin oxide (ITO) into 4,4′,4″-tris {N,-(3-methylphenyl)-N-phenylamino} triphenylamine (m-MTDATA) and have measured the hole carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal ohmic contact at high electric fields. The drift mobility of the m-MTDATA molecular glass was found to be electric field dependent and a negative field dependence was detected at fields lower than 1×105 V/cm. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIEBellingham, WA, United States
State	Published - Dec 1 1998
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2019-11-27

Cite this

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title = "Charge injection from indium-tin-oxide into a starburst amine and its implications for organic light-emitting diodes",

abstract = "We have investigated the hole injection characteristics from indium tin oxide (ITO) into 4,4′,4″-tris {N,-(3-methylphenyl)-N-phenylamino} triphenylamine (m-MTDATA) and have measured the hole carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal ohmic contact at high electric fields. The drift mobility of the m-MTDATA molecular glass was found to be electric field dependent and a negative field dependence was detected at fields lower than 1×105 V/cm. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes.",

author = "Homer Antoniadis and Carsten Giebeler and Bradley, {Donal D.C.} and Yasuhiko Shirota",

note = "Generated from Scopus record by KAUST IRTS on 2019-11-27",

year = "1998",

month = dec,

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language = "English (US)",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIEBellingham, WA, United States",

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Charge injection from indium-tin-oxide into a starburst amine and its implications for organic light-emitting diodes. / Antoniadis, Homer; Giebeler, Carsten; Bradley, Donal D.C. et al.
Proceedings of SPIE - The International Society for Optical Engineering. SPIEBellingham, WA, United States, 1998.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Charge injection from indium-tin-oxide into a starburst amine and its implications for organic light-emitting diodes

AU - Antoniadis, Homer

AU - Giebeler, Carsten

AU - Bradley, Donal D.C.

AU - Shirota, Yasuhiko

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have investigated the hole injection characteristics from indium tin oxide (ITO) into 4,4′,4″-tris {N,-(3-methylphenyl)-N-phenylamino} triphenylamine (m-MTDATA) and have measured the hole carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal ohmic contact at high electric fields. The drift mobility of the m-MTDATA molecular glass was found to be electric field dependent and a negative field dependence was detected at fields lower than 1×105 V/cm. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes.

AB - We have investigated the hole injection characteristics from indium tin oxide (ITO) into 4,4′,4″-tris {N,-(3-methylphenyl)-N-phenylamino} triphenylamine (m-MTDATA) and have measured the hole carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal ohmic contact at high electric fields. The drift mobility of the m-MTDATA molecular glass was found to be electric field dependent and a negative field dependence was detected at fields lower than 1×105 V/cm. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes.

UR - http://www.scopus.com/inward/record.url?scp=0032304857&partnerID=8YFLogxK

M3 - Conference contribution

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIEBellingham, WA, United States

ER -

Charge injection from indium-tin-oxide into a starburst amine and its implications for organic light-emitting diodes

Abstract

Bibliographical note

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