Abstract
Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.
Original language | English (US) |
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Pages (from-to) | 4109-4111 |
Number of pages | 3 |
Journal | OPTICS LETTERS |
Volume | 35 |
Issue number | 24 |
DOIs | |
State | Published - Dec 15 2010 |
Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics