Characterization of sol-gel SiO2:Ce,Tb powder and pulsed laser deposited thin film phosphors

O. M. Ntwaeaborwa, M. S. Dhlamini, R. A. Harris, J. R. Botha, U. Buttner, H. C. Swart

Research output: Contribution to journalConference articlepeer-review


Thin films of SiO2:Ce,Tb (Ce = Tb = 0.5 mol%) nanoparticulate phosphor (nanophosphor) were ablated on Si (100) substrates using either the conventional pulsed laser deposition (PLD) or pulsed reactive crossed beam laser ablation (PRCLA) technique. Morphology and surface topography of the films were analysed with scanning electron microscopy (SEM) and atomic force microscopy (AFM) respectively. The chemical composition and thicknesses of the films were determined by Rutherford backscattering spectroscopy (RBS). Luminescence properties of the films were studied with cathodoluminescence (CL) spectroscopy and a 325 nm HeCd laser. Enhanced green cathodoluminescence and photoluminescence (PL) associated with 5D4→7F4 transitions in Tb3+ was observed at ∼540 nm in powder and thin film samples, and is attributed to non-radiative energy transfer from codoped Ce3+. Luminescence intensities of the films and that of the SiO2:Ce,Tb powder used to make the films are compared.

Original languageEnglish (US)
Pages (from-to)602-605
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number2
StatePublished - 2008
Externally publishedYes
EventE-MRS 2007 Spring Meeting-Symposium F - Novel Gain Materials and Devices Based on III-N-V Compounds - Strasbourg, France
Duration: May 28 2007Jun 1 2007

ASJC Scopus subject areas

  • Condensed Matter Physics


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