Characterization of Planar Antennas Fabricated on GaAs Epilayers Containing As Clusters for Picosecond Short-Pulse Applications

Lawrence Carin; David R. Kralij; Jerry M. Woodall; Michael R. Melloch

doi:10.1109/75.244872

Characterization of Planar Antennas Fabricated on GaAs Epilayers Containing As Clusters for Picosecond Short-Pulse Applications

Lawrence Carin, David R. Kralij, Jerry M. Woodall, Michael R. Melloch

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Coplanar-strip horn antennas are fabricated on GaAs grown by molecular beam epitaxy at substrate temperatures of 220, 250, and 270° C. These antennas are switched photo conductively using a picosecond laser to generate and detect freely propagating bursts of electromagnetic radiation. The dependence of the antenna performance on substrate growth temperature is assessed and is also compared with the performance of like antennas fabricated on oxygen-bombarded silicon on sapphire. It is shown that in our picosecond measurements the radiated pulse duration is not very sensitive to substrate growth temperature but the radiated intensity is highly sensitive to this parameter. © 1993 IEEE

Original language	English (US)
Pages (from-to)	339-341
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	3
Issue number	9
DOIs	https://doi.org/10.1109/75.244872
State	Published - Jan 1 1993
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-02-09

Access to Document

10.1109/75.244872

Cite this

@article{02d805b2cfca44e4b4f0b7c727bba7dc,

title = "Characterization of Planar Antennas Fabricated on GaAs Epilayers Containing As Clusters for Picosecond Short-Pulse Applications",

abstract = "Coplanar-strip horn antennas are fabricated on GaAs grown by molecular beam epitaxy at substrate temperatures of 220, 250, and 270° C. These antennas are switched photo conductively using a picosecond laser to generate and detect freely propagating bursts of electromagnetic radiation. The dependence of the antenna performance on substrate growth temperature is assessed and is also compared with the performance of like antennas fabricated on oxygen-bombarded silicon on sapphire. It is shown that in our picosecond measurements the radiated pulse duration is not very sensitive to substrate growth temperature but the radiated intensity is highly sensitive to this parameter. {\textcopyright} 1993 IEEE",

author = "Lawrence Carin and Kralij, {David R.} and Woodall, {Jerry M.} and Melloch, {Michael R.}",

note = "Generated from Scopus record by KAUST IRTS on 2021-02-09",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/75.244872",

language = "English (US)",

volume = "3",

pages = "339--341",

journal = "IEEE Microwave and Guided Wave Letters",

issn = "1051-8207",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Characterization of Planar Antennas Fabricated on GaAs Epilayers Containing As Clusters for Picosecond Short-Pulse Applications

AU - Carin, Lawrence

AU - Kralij, David R.

AU - Woodall, Jerry M.

AU - Melloch, Michael R.

N1 - Generated from Scopus record by KAUST IRTS on 2021-02-09

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Coplanar-strip horn antennas are fabricated on GaAs grown by molecular beam epitaxy at substrate temperatures of 220, 250, and 270° C. These antennas are switched photo conductively using a picosecond laser to generate and detect freely propagating bursts of electromagnetic radiation. The dependence of the antenna performance on substrate growth temperature is assessed and is also compared with the performance of like antennas fabricated on oxygen-bombarded silicon on sapphire. It is shown that in our picosecond measurements the radiated pulse duration is not very sensitive to substrate growth temperature but the radiated intensity is highly sensitive to this parameter. © 1993 IEEE

AB - Coplanar-strip horn antennas are fabricated on GaAs grown by molecular beam epitaxy at substrate temperatures of 220, 250, and 270° C. These antennas are switched photo conductively using a picosecond laser to generate and detect freely propagating bursts of electromagnetic radiation. The dependence of the antenna performance on substrate growth temperature is assessed and is also compared with the performance of like antennas fabricated on oxygen-bombarded silicon on sapphire. It is shown that in our picosecond measurements the radiated pulse duration is not very sensitive to substrate growth temperature but the radiated intensity is highly sensitive to this parameter. © 1993 IEEE

UR - http://ieeexplore.ieee.org/document/244872/

UR - http://www.scopus.com/inward/record.url?scp=0027664622&partnerID=8YFLogxK

U2 - 10.1109/75.244872

DO - 10.1109/75.244872

M3 - Article

SN - 1051-8207

VL - 3

SP - 339

EP - 341

JO - IEEE Microwave and Guided Wave Letters

JF - IEEE Microwave and Guided Wave Letters

IS - 9

ER -

Characterization of Planar Antennas Fabricated on GaAs Epilayers Containing As Clusters for Picosecond Short-Pulse Applications

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this