Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report on low-defect-density non-polar a-plane and m-plane GaN films grown by sidewall epitaxial lateral overgrowth (SELO) technique. Dislocations and stacking faults were decreased markedly over the whole area, and surface roughness was decreased with decreasing defect density. The photoluminescence intensity of SELO a-plane and m-plane GaN was about 200 times higher than that of a-plane and m-plane GaN template. We also fabricated and characterized LEDs on a-plane and m-plane GaN using SELO technique. The light power of LEDs increased with decreasing of threading dislocation.
Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
DOIs
StatePublished - May 22 2007
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

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