Abstract
Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. The a-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and the c-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050°C to 1080°C. The morphological transition was correlated to change in the a-plane GaN tilt mosaic measured by XRC.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 659-663 |
| Number of pages | 5 |
| Volume | 892 |
| State | Published - 2006 |
| Externally published | Yes |
| Event | 2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005 |
Other
| Other | 2005 Materials Research Society Fall Meeting |
|---|---|
| Country/Territory | United States |
| City | Boston, MA |
| Period | 11/28/05 → 12/2/05 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials