@inproceedings{4e281661b34146fbbb0c5125de473752,
title = "Characterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy",
abstract = "Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. The a-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and the c-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050°C to 1080°C. The morphological transition was correlated to change in the a-plane GaN tilt mosaic measured by XRC.",
author = "K. Kusakabe and S. Ando and K. Ohkawa",
year = "2006",
language = "English (US)",
isbn = "1558998462",
series = "Materials Research Society Symposium Proceedings",
pages = "659--663",
booktitle = "Materials Research Society Symposium Proceedings",
note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",
}