Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing

Abhas Mehta, Qingxiao Wang, Sam Shichijo, M.J. Kim

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish (US)
    Pages (from-to)2276-2277
    Number of pages2
    JournalMicroscopy and Microanalysis
    Issue numberS1
    StatePublished - Jul 22 2022

    Bibliographical note

    KAUST Repository Item: Exported on 2022-09-14

    ASJC Scopus subject areas

    • Instrumentation

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