Characterization of Er in porous Si

Guido Mula*, Susanna Setzu, Gianluca Manunza, Roberta Ruffilli, Andrea Falqui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.

Original languageEnglish (US)
Article number376
JournalNanoscale Research Letters
Volume7
DOIs
StatePublished - 2012

Keywords

  • Er doping
  • Light-emitting devices
  • Porous silicon
  • Refractive index

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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