Characterization of current transport in ferroelectric polymer devices

Amir Hanna; Unnat Sampatraj Bhansali; Yasser Khan; Husam N. Alshareef

doi:10.1016/j.orgel.2013.10.009

Characterization of current transport in ferroelectric polymer devices

Amir Hanna, Unnat Sampatraj Bhansali, Yasser Khan, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed. © 2013 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	22-28
Number of pages	7
Journal	Organic Electronics
Volume	15
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2013.10.009
State	Published - Jan 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to acknowledge M.N. Al-Madhoun for his help in device fabrication and valuable discussions. The authors also acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015.

ASJC Scopus subject areas

Materials Chemistry
Biomaterials
General Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1016/j.orgel.2013.10.009

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title = "Characterization of current transport in ferroelectric polymer devices",

abstract = "We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed. {\textcopyright} 2013 Elsevier B.V. All rights reserved.",

author = "Amir Hanna and Bhansali, {Unnat Sampatraj} and Yasser Khan and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to acknowledge M.N. Al-Madhoun for his help in device fabrication and valuable discussions. The authors also acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015.",

year = "2014",

month = jan,

doi = "10.1016/j.orgel.2013.10.009",

language = "English (US)",

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journal = "Organic Electronics",

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AU - Hanna, Amir

AU - Bhansali, Unnat Sampatraj

AU - Khan, Yasser

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to acknowledge M.N. Al-Madhoun for his help in device fabrication and valuable discussions. The authors also acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015.

PY - 2014/1

Y1 - 2014/1

N2 - We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed. © 2013 Elsevier B.V. All rights reserved.

AB - We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed. © 2013 Elsevier B.V. All rights reserved.

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U2 - 10.1016/j.orgel.2013.10.009

DO - 10.1016/j.orgel.2013.10.009

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JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

Characterization of current transport in ferroelectric polymer devices

Abstract

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ASJC Scopus subject areas

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