Abstract
The anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction analysis of the heterostructure of AlGaN and GaN grown on r-plane sapphire. The AlGaN layer with a low AlN molar fraction or small thickness is coherently grown on the GaN layer both along the m-axis and c-axis. An increase in AlN molar fraction or thickness in AlGaN, results in a slight relaxation of AlGaN only in one direction due to tensile stress along the c-axis, which is caused by the underlying GaN layer during the growth. The cause of the relaxation of AlGaN in one direction is thought to be a large anisotropically biaxial stress. © 2006 Materials Research Society.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium Proceedings |
Pages | 137-142 |
Number of pages | 6 |
State | Published - May 15 2006 |
Externally published | Yes |