Characterization and modeling of atomically sharp "perfect" Si:Ge/SiO2 interfaces

W. Windl; T. Liang; S. Lopatin; G. Duscher

doi:10.1149/1.2355851

Characterization and modeling of atomically sharp "perfect" Si:Ge/SiO₂ interfaces

W. Windl^*, T. Liang, S. Lopatin, G. Duscher

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO₂. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.

Original language	English (US)
Title of host publication	SiGe and Ge
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	539-549
Number of pages	11
Edition	7
ISBN (Electronic)	1566775078
DOIs	https://doi.org/10.1149/1.2355851
State	Published - 2006
Externally published	Yes
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

Publication series

Name	ECS Transactions
Number	7
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	10/29/06 → 11/3/06

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.2355851

Cite this

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title = "Characterization and modeling of atomically sharp {"}perfect{"} Si:Ge/SiO2 interfaces",

abstract = "Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.",

author = "W. Windl and T. Liang and S. Lopatin and G. Duscher",

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doi = "10.1149/1.2355851",

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publisher = "Electrochemical Society Inc.",

number = "7",

pages = "539--549",

booktitle = "SiGe and Ge",

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note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

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Windl, W, Liang, T, Lopatin, S & Duscher, G 2006, Characterization and modeling of atomically sharp "perfect" Si:Ge/SiO₂ interfaces. in SiGe and Ge: Materials, Processing, and Devices. 7 edn, ECS Transactions, no. 7, vol. 3, Electrochemical Society Inc., pp. 539-549, SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting, Cancun, Mexico, 10/29/06. https://doi.org/10.1149/1.2355851

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AU - Lopatin, S.

AU - Duscher, G.

PY - 2006

Y1 - 2006

N2 - Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.

AB - Using ab-initio calculations and atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy, we show that oxidation of a germanium-implanted Si surface can produce an atomically-sharp interface with a band structure that seems to be more favorable for use in electronic devices than the usually diffuse interface in Si/SiO2. Furthermore, we propose an ab-initio based Monte-Carlo model to simulate oxidation of SiGe alloys to better understand the formation of the sharp interface. copyright The Electrochemical Society.

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DO - 10.1149/1.2355851

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