Characteristics of ZnCdSe single-quantum-well laser diodes

A. Tsujimura; S. Yoshii; S. Hayashi; K. Ohkawa; T. Mitsuyu; H. Takeishi

doi:10.1016/0921-4526(93)90185-9

Characteristics of ZnCdSe single-quantum-well laser diodes

A. Tsujimura^*, S. Yoshii, S. Hayashi, K. Ohkawa, T. Mitsuyu, H. Takeishi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The Cd composition ratio x of the active layer dependence of the lasing wavelength and the temperature dependence of the threshold current were investigated for Zn_1-xCd_xSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x=0.15 to 520 nm (green) for x=0.31 at 77 K. A clear reduction in the threshold current was observed by applying high-reflectivity (HR) facet coating. 90%-90% HR coated devices with x=0.25 lased without arising the carrier leakage up to 250 K under pulsed operation.

Original language	English (US)
Pages (from-to)	130-132
Number of pages	3
Journal	Physica B: Physics of Condensed Matter
Volume	191
Issue number	1-2
DOIs	https://doi.org/10.1016/0921-4526(93)90185-9
State	Published - Sep 1 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Characteristics of ZnCdSe single-quantum-well laser diodes",

abstract = "The Cd composition ratio x of the active layer dependence of the lasing wavelength and the temperature dependence of the threshold current were investigated for Zn1-xCdxSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x=0.15 to 520 nm (green) for x=0.31 at 77 K. A clear reduction in the threshold current was observed by applying high-reflectivity (HR) facet coating. 90%-90% HR coated devices with x=0.25 lased without arising the carrier leakage up to 250 K under pulsed operation.",

author = "A. Tsujimura and S. Yoshii and S. Hayashi and K. Ohkawa and T. Mitsuyu and H. Takeishi",

year = "1993",

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doi = "10.1016/0921-4526(93)90185-9",

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T1 - Characteristics of ZnCdSe single-quantum-well laser diodes

AU - Tsujimura, A.

AU - Yoshii, S.

AU - Hayashi, S.

AU - Ohkawa, K.

AU - Mitsuyu, T.

AU - Takeishi, H.

PY - 1993/9/1

Y1 - 1993/9/1

N2 - The Cd composition ratio x of the active layer dependence of the lasing wavelength and the temperature dependence of the threshold current were investigated for Zn1-xCdxSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x=0.15 to 520 nm (green) for x=0.31 at 77 K. A clear reduction in the threshold current was observed by applying high-reflectivity (HR) facet coating. 90%-90% HR coated devices with x=0.25 lased without arising the carrier leakage up to 250 K under pulsed operation.

AB - The Cd composition ratio x of the active layer dependence of the lasing wavelength and the temperature dependence of the threshold current were investigated for Zn1-xCdxSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x=0.15 to 520 nm (green) for x=0.31 at 77 K. A clear reduction in the threshold current was observed by applying high-reflectivity (HR) facet coating. 90%-90% HR coated devices with x=0.25 lased without arising the carrier leakage up to 250 K under pulsed operation.

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U2 - 10.1016/0921-4526(93)90185-9

DO - 10.1016/0921-4526(93)90185-9

M3 - Article

AN - SCOPUS:0027657115

SN - 0921-4526

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JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - 1-2

ER -

Characteristics of ZnCdSe single-quantum-well laser diodes

Abstract

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