Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm

Hongping Zhao*, G. S. Huang, Guangyu Liu, Xiaohang Li, Jonathan D. Poplawsky, S. Tafon Penn, Volkmar Dierolf, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


The pursuit of high-efficiency InGaN quantum wells (QWs) emitting in green spectral regime (λ∼ 520 nm) has tremendous impact for solid state lighting and green diode lasers. However, due to the existence of polarization field in InGaN QW, band bending in the QW leads to charge separation resulting in reduction of the electron-hole wave function overlap (Γe-hh) and the radiative recombination rate (∼|Γe-hh|2) in particular for green emission wavelength. Recently, several approaches are proposed to enhance the Γe-hh for the InGaN QW as follow 1) staggered InGaN QW [1], 2) type-II InGaN-GaNAs QW [2], and 3) non-polar InGaN QW [3].

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Number of pages2
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other67th Device Research Conference, DRC 2009
Country/TerritoryUnited States
CityUniversity Park, PA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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