p-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4 x 1015 cm-3. Hall mobility was as high as 86 cm2/V-s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.
|Original language||English (US)|
|Journal||Japanese Journal of Applied Physics|
|State||Published - Feb 1991|
- Hall measurement
- Pt electrode
ASJC Scopus subject areas
- Physics and Astronomy(all)