Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers

Guangyu Liu; Jing Zhang; Chee Keong Tan; Nelson Tansu

doi:10.1109/IPCon.2012.6358677

Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers

Guangyu Liu^*, Jing Zhang, Chee Keong Tan, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.

Original language	English (US)
Title of host publication	2012 IEEE Photonics Conference, IPC 2012
Pages	431-432
Number of pages	2
DOIs	https://doi.org/10.1109/IPCon.2012.6358677
State	Published - 2012
Externally published	Yes
Event	25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States Duration: Sep 23 2012 → Sep 27 2012

Other

Other	25th IEEE Photonics Conference, IPC 2012
Country/Territory	United States
City	Burlingame, CA
Period	09/23/12 → 09/27/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/IPCon.2012.6358677

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@inproceedings{8ac83fc016b54de1ae192f6bd4e79760,

title = "Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers",

abstract = "The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.",

author = "Guangyu Liu and Jing Zhang and Tan, {Chee Keong} and Nelson Tansu",

year = "2012",

doi = "10.1109/IPCon.2012.6358677",

language = "English (US)",

isbn = "9781457707315",

pages = "431--432",

booktitle = "2012 IEEE Photonics Conference, IPC 2012",

note = "25th IEEE Photonics Conference, IPC 2012 ; Conference date: 23-09-2012 Through 27-09-2012",

}

TY - GEN

T1 - Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers

AU - Liu, Guangyu

AU - Zhang, Jing

AU - Tan, Chee Keong

AU - Tansu, Nelson

PY - 2012

Y1 - 2012

N2 - The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.

AB - The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.

UR - http://www.scopus.com/inward/record.url?scp=84871813607&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2012.6358677

DO - 10.1109/IPCon.2012.6358677

M3 - Conference contribution

AN - SCOPUS:84871813607

SN - 9781457707315

SP - 431

EP - 432

BT - 2012 IEEE Photonics Conference, IPC 2012

T2 - 25th IEEE Photonics Conference, IPC 2012

Y2 - 23 September 2012 through 27 September 2012

ER -

Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers

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