Abstract
The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.
Original language | English (US) |
---|---|
Title of host publication | 2012 IEEE Photonics Conference, IPC 2012 |
Pages | 431-432 |
Number of pages | 2 |
DOIs | |
State | Published - 2012 |
Externally published | Yes |
Event | 25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States Duration: Sep 23 2012 → Sep 27 2012 |
Other
Other | 25th IEEE Photonics Conference, IPC 2012 |
---|---|
Country/Territory | United States |
City | Burlingame, CA |
Period | 09/23/12 → 09/27/12 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering