Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

Junseok Heo, Pallab K. Bhattacharya, Wei Guo, Boon S. Ooi, Zifan Zhou

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.
Original languageEnglish (US)
Pages (from-to)181102
JournalApplied Physics Letters
Issue number18
StatePublished - Oct 28 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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