Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k / WAlx /TiSiN gate stack

Chang Seo Park, Muhamad M. Hussain, Gennadi Bersuker, Paul D. Kirsch, Raj Jammy

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A metal/high-k gate stack with a p-type band edge effective work function (EWF) of about 5.0 eV is demonstrated using a thin WAlx capping layer. The WAlx stack exhibits a lower threshold voltage (higher flatband voltage) value and better equivalent oxide thickness scalability than previously reported high EWF gate stacks using an AlOx cap. The WAlx cap p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) show significantly improved negative bias temperature instability (NBTI) characteristics than AlOx -capped pMOSFETs, which is attributed to negligible diffusion of Al into the interfacial oxide layer adjacent to the Si substrate.

Original languageEnglish (US)
Article number023501
JournalApplied Physics Letters
Issue number2
StatePublished - Jul 12 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this