TY - GEN
T1 - Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale
AU - Bayer, A.
AU - Porti, M.
AU - Martin-Martinez, J.
AU - Lanza, M.
AU - Rodriguez, R.
AU - Velayudhan, V.
AU - Amat, E.
AU - Nafria, M.
AU - Aymerich, X.
AU - Gonzalez, M. B.
AU - Simoen, E.
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2013/8/7
Y1 - 2013/8/7
N2 - In this work, the gate stack electrical properties of fresh and channel-hot-carrier (CHC) stressed MOSFETs have been investigated at the nanoscale with a Conductive Atomic Force Microscope (CAFM). For the first time, by measuring on the bare oxide, the CAFM has allowed evaluation of the degradation induced along the channel by a previous CHC stress. In particular, higher gate leakage was measured close to source and drain, which has been related to NBTI and CHC degradation, respectively. © 2013 IEEE.
AB - In this work, the gate stack electrical properties of fresh and channel-hot-carrier (CHC) stressed MOSFETs have been investigated at the nanoscale with a Conductive Atomic Force Microscope (CAFM). For the first time, by measuring on the bare oxide, the CAFM has allowed evaluation of the degradation induced along the channel by a previous CHC stress. In particular, higher gate leakage was measured close to source and drain, which has been related to NBTI and CHC degradation, respectively. © 2013 IEEE.
UR - http://ieeexplore.ieee.org/document/6532039/
UR - http://www.scopus.com/inward/record.url?scp=84881021297&partnerID=8YFLogxK
U2 - 10.1109/IRPS.2013.6532039
DO - 10.1109/IRPS.2013.6532039
M3 - Conference contribution
SN - 9781479901135
BT - IEEE International Reliability Physics Symposium Proceedings
ER -