CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations

K. Leonardi; H. Heinke; K. Ohkawa; D. Hommel; H. Selke; F. Gindele; U. Woggon

doi:10.1063/1.119951

CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations

K. Leonardi^*, H. Heinke, K. Ohkawa, D. Hommel, H. Selke, F. Gindele, U. Woggon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Migration enhanced epitaxy has been applied to induce the change from two-dimensional growth to formation of self-assembling islands in the growth of CdSe on ZnSe. Transmission electron microscopy images from samples with a ZnSe caplayer show a transition from a flat quantum well to an interrupted layer with pronounced thickness fluctuations when the CdSe exceeds its critical thickness. These results are confirmed by high resolution x-ray diffraction measurements, as only for the former sample the 004 rocking curve can be simulated assuming a flat quantum well with abrupt interfaces. Compared to bulk CdSe, the photoluminescence peak is blueshifted by about 0.5 eV. PL excitation experiments indicate that the interrupted layer consists of CdSe islands embedded in Zn_1-xCd_xSe with a composition gradient. Atomic force microscopy images of uncapped samples show spherical islands with a height of 20 nm and a diameter-to-height ratio of 4:1.

Original language	English (US)
Pages (from-to)	1510-1512
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	11
DOIs	https://doi.org/10.1063/1.119951
State	Published - Sep 15 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations",

abstract = "Migration enhanced epitaxy has been applied to induce the change from two-dimensional growth to formation of self-assembling islands in the growth of CdSe on ZnSe. Transmission electron microscopy images from samples with a ZnSe caplayer show a transition from a flat quantum well to an interrupted layer with pronounced thickness fluctuations when the CdSe exceeds its critical thickness. These results are confirmed by high resolution x-ray diffraction measurements, as only for the former sample the 004 rocking curve can be simulated assuming a flat quantum well with abrupt interfaces. Compared to bulk CdSe, the photoluminescence peak is blueshifted by about 0.5 eV. PL excitation experiments indicate that the interrupted layer consists of CdSe islands embedded in Zn1-xCdxSe with a composition gradient. Atomic force microscopy images of uncapped samples show spherical islands with a height of 20 nm and a diameter-to-height ratio of 4:1.",

author = "K. Leonardi and H. Heinke and K. Ohkawa and D. Hommel and H. Selke and F. Gindele and U. Woggon",

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T1 - CdSe/ZnSe quantum structures grown by migration enhanced epitaxy

T2 - Structural and optical investigations

AU - Leonardi, K.

AU - Heinke, H.

AU - Ohkawa, K.

AU - Hommel, D.

AU - Selke, H.

AU - Gindele, F.

AU - Woggon, U.

PY - 1997/9/15

Y1 - 1997/9/15

N2 - Migration enhanced epitaxy has been applied to induce the change from two-dimensional growth to formation of self-assembling islands in the growth of CdSe on ZnSe. Transmission electron microscopy images from samples with a ZnSe caplayer show a transition from a flat quantum well to an interrupted layer with pronounced thickness fluctuations when the CdSe exceeds its critical thickness. These results are confirmed by high resolution x-ray diffraction measurements, as only for the former sample the 004 rocking curve can be simulated assuming a flat quantum well with abrupt interfaces. Compared to bulk CdSe, the photoluminescence peak is blueshifted by about 0.5 eV. PL excitation experiments indicate that the interrupted layer consists of CdSe islands embedded in Zn1-xCdxSe with a composition gradient. Atomic force microscopy images of uncapped samples show spherical islands with a height of 20 nm and a diameter-to-height ratio of 4:1.

AB - Migration enhanced epitaxy has been applied to induce the change from two-dimensional growth to formation of self-assembling islands in the growth of CdSe on ZnSe. Transmission electron microscopy images from samples with a ZnSe caplayer show a transition from a flat quantum well to an interrupted layer with pronounced thickness fluctuations when the CdSe exceeds its critical thickness. These results are confirmed by high resolution x-ray diffraction measurements, as only for the former sample the 004 rocking curve can be simulated assuming a flat quantum well with abrupt interfaces. Compared to bulk CdSe, the photoluminescence peak is blueshifted by about 0.5 eV. PL excitation experiments indicate that the interrupted layer consists of CdSe islands embedded in Zn1-xCdxSe with a composition gradient. Atomic force microscopy images of uncapped samples show spherical islands with a height of 20 nm and a diameter-to-height ratio of 4:1.

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CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations

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