Cavity parameters of zncdse/znse single-quantum-well separate-confinement-heterostructure laser diodes

Ayumu Tsujimura, Shigeo Yoshii, Shigeo Hayashi, Kazuhiro Ohkawa, Tsuneo Mitsuyu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The cavity length dependence of the external differential quantum efficiency and the threshold current density was investigated for ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes at 77 K. An internal loss of 1.5 cm-1, an internal quantum efficiency of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm2*/mi) and a gain factor of 0.36 cm2.μm/A were obtained. The transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous emission will lead to reduction of the operation current.

Original languageEnglish (US)
Pages (from-to)L1750-L1752
JournalJapanese Journal of Applied Physics
Issue number12 A
StatePublished - 1993
Externally publishedYes


  • Cavity parameters
  • Optical gain
  • Semiconductor lasers
  • Transparency current density
  • ZnCdSe
  • ZnSe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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