Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes

Hongping Zhao*, Jing Zhang, Takahiro Toma, Guangyu Liu, Jonathan D. Poplawsky, Volkmar Dierolf, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Growths of linearly-graded staggered InGaN quantum wells light-emitting diodes are performed, and the use of this novel active region leads to 2.5-3.5 times increase in output power.

Original languageEnglish (US)
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages532-533
Number of pages2
DOIs
StatePublished - Dec 1 2010
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: Nov 7 2010Nov 11 2010

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/TerritoryUnited States
CityDenver, CO
Period11/7/1011/11/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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