Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

S. Marcinkevičius; K. Gelžinytė; Y. Zhao; S. Nakamura; S. P. DenBaars; J. S. Speck

doi:10.1063/1.4896034

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, J. S. Speck

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

Original language	English (US)
Pages (from-to)	111108
Journal	Applied Physics Letters
Volume	105
Issue number	11
DOIs	https://doi.org/10.1063/1.4896034
State	Published - Sep 16 2014
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The research at UCSB was supported by the Solid State Lighting and Energy Electronic Center (SSLEEC) and by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1063/1.4896034

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title = "Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence",

abstract = "{\textcopyright} 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.",

author = "S. Marcinkevi{\v c}ius and K. Gel{\v z}inytė and Y. Zhao and S. Nakamura and DenBaars, {S. P.} and Speck, {J. S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The research at UCSB was supported by the Solid State Lighting and Energy Electronic Center (SSLEEC) and by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2014",

month = sep,

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doi = "10.1063/1.4896034",

language = "English (US)",

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T1 - Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

AU - Marcinkevičius, S.

AU - Gelžinytė, K.

AU - Zhao, Y.

AU - Nakamura, S.

AU - DenBaars, S. P.

AU - Speck, J. S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The research at UCSB was supported by the Solid State Lighting and Energy Electronic Center (SSLEEC) and by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2014/9/16

Y1 - 2014/9/16

N2 - © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

AB - © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

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M3 - Article

SN - 0003-6951

VL - 105

SP - 111108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

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