Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, J. S. Speck

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© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.
Original languageEnglish (US)
Pages (from-to)111108
JournalApplied Physics Letters
Issue number11
StatePublished - Sep 16 2014
Externally publishedYes

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