Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

Li Chen; Yijun Dai; Liang Li; Jiean Jiang; Houqiang Xu; Kuang-Hui Li; Tien Khee Ng; Mei Cui; Wei Guo; Haiding Sun; Jichun Ye

doi:10.1016/j.jallcom.2020.157589

Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

Li Chen, Yijun Dai, Liang Li, Jiean Jiang, Houqiang Xu, Kuang-Hui Li, Tien Khee Ng, Mei Cui, Wei Guo, Haiding Sun, Jichun Ye

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Abstract

In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter.

Original language	English (US)
Pages (from-to)	157589
Journal	Journal of Alloys and Compounds
Volume	861
DOIs	https://doi.org/10.1016/j.jallcom.2020.157589
State	Published - Oct 15 2020

Bibliographical note

KAUST Repository Item: Exported on 2021-01-18
Acknowledgements: This work was supported by National Key Research and Development Program of China (2016YFB0400802), National Natural Science Foundation of China (61974149, 61704176), Key Research and Development Program of Zhejiang Province (2019C01080, 2020C01145), and Ningbo Innovation 2025 Major Project (2018B10088, 2019B10121).

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10.1016/j.jallcom.2020.157589

https://repository.kaust.edu.sa/bitstream/10754/666910/1/carrier%20localization.pdf

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@article{0c0aa972bb184592b442acf2a02a6c27,

title = "Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer",

abstract = "In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter.",

author = "Li Chen and Yijun Dai and Liang Li and Jiean Jiang and Houqiang Xu and Kuang-Hui Li and Ng, {Tien Khee} and Mei Cui and Wei Guo and Haiding Sun and Jichun Ye",

note = "KAUST Repository Item: Exported on 2021-01-18 Acknowledgements: This work was supported by National Key Research and Development Program of China (2016YFB0400802), National Natural Science Foundation of China (61974149, 61704176), Key Research and Development Program of Zhejiang Province (2019C01080, 2020C01145), and Ningbo Innovation 2025 Major Project (2018B10088, 2019B10121).",

year = "2020",

month = oct,

day = "15",

doi = "10.1016/j.jallcom.2020.157589",

language = "English (US)",

volume = "861",

pages = "157589",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

AU - Chen, Li

AU - Dai, Yijun

AU - Li, Liang

AU - Jiang, Jiean

AU - Xu, Houqiang

AU - Li, Kuang-Hui

AU - Ng, Tien Khee

AU - Cui, Mei

AU - Guo, Wei

AU - Sun, Haiding

AU - Ye, Jichun

N1 - KAUST Repository Item: Exported on 2021-01-18 Acknowledgements: This work was supported by National Key Research and Development Program of China (2016YFB0400802), National Natural Science Foundation of China (61974149, 61704176), Key Research and Development Program of Zhejiang Province (2019C01080, 2020C01145), and Ningbo Innovation 2025 Major Project (2018B10088, 2019B10121).

PY - 2020/10/15

Y1 - 2020/10/15

N2 - In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter.

AB - In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter.

UR - http://hdl.handle.net/10754/666910

UR - https://linkinghub.elsevier.com/retrieve/pii/S0925838820339530

U2 - 10.1016/j.jallcom.2020.157589

DO - 10.1016/j.jallcom.2020.157589

M3 - Article

SN - 0925-8388

VL - 861

SP - 157589

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

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