Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes

Mufasila Mumthaz Muhammed, Jian Xu, Nimer Wehbe, Iman S. Roqan

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

High-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.
Original languageEnglish (US)
Pages (from-to)14869
JournalOptics Express
Volume26
Issue number12
DOIs
StatePublished - May 29 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The samples were purchased from Tamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan. The author would like to thank the growers Mr. Yoshihiro Yamashita, Mr. Higuchi Mitsuhito, and Mr. Akito Kuramata, president and CEO of Novel Crystal Technology, Inc. Japan. The authors thanks KAUST for the finance support.

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