Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Yun Xu, Xiaopeng Zhu, Qiaoqiang Gan, Guofeng Song, Qing Cao, Liang Guo, Yuzhang Li, Lianghui Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6×6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.
Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages221-225
Number of pages5
DOIs
StatePublished - May 6 2005
Externally publishedYes

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