Bottom Contact Metal Oxide Interface Modification Improving the Efficiency of Organic Light Emitting Diodes.

Sergey M Pozov, Apostolos Ioakeimidis, Ioannis T Papadas, Chen Sun, Alexandra Z Chrusou, Donal Bradley, Stelios A Choulis

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The performance of solution-processed organic light emitting diodes (OLEDs) is often limited by non-uniform contacts. In this work, we introduce Ni-containing solution-processed metal oxide (MO) interfacial layers inserted between indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) to improve the bottom electrode contact for OLEDs using the poly(p-phenylene vinylene) (PPV) derivative Super-Yellow (SY) as an emission layer. For ITO/Ni-containing MO/PEDOT:PSS bottom electrode structures we show enhanced wetting properties that result in an improved OLED device efficiency. Best performance is achieved using a Cu-Li co-doped spinel nickel cobaltite [(Cu-Li):NiCo2O4], for which the current efficiency and luminous efficacy of SY OLEDs increased, respectively, by 12% and 11% from the values obtained for standard devices without a Ni-containing MO interface modification between ITO and PEDOT:PSS. The enhanced performance was attributed to the improved morphology of PEDOT:PSS, which consequently increased the hole injection capability of the optimized ITO/(Cu-Li):NiCo2O4/PEDOT:PSS electrode.
Original languageEnglish (US)
Pages (from-to)5082
JournalMaterials (Basel, Switzerland)
Volume13
Issue number22
DOIs
StatePublished - Nov 14 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-11-17
Acknowledgements: This project received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant Agreement No.647311) and further supported from internal Cyprus University of Technology funding to the Molecular Electronics and Photonics Research Unit. C.S and D.D.C.B thank the Royal Society for the provision of a Newton International Fellowship to C.S (Application number: NF171117) that funded her stay in Oxford.

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