Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics

A. Ranjan; N. Raghavan; F.M. Puglisi; S. Mei; A. Padovani; L. Larcher; K. Shubhakar; P. Pavan; M. Bosman; Xixiang Zhang; S.J. O’Shea; K.L. Pey

doi:10.1109/LED.2019.2923420

Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics

A. Ranjan, N. Raghavan, F.M. Puglisi, S. Mei, A. Padovani, L. Larcher, K. Shubhakar, P. Pavan, M. Bosman, Xixiang Zhang, S.J. O’Shea, K.L. Pey

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Abstract

Dielectric breakdown in 2-D insulating films for future logic device technology is not well understood yet, in contrast to the extensive insight we have in the breakdown of bulk dielectric films such as HfO2 and SiO2. In this study, we investigate the stochastic nature of breakdown (BD) in hexagonal boron nitride (h-BN) films using ramp voltage stress and examine the BD trends as a function of stress polarity, area and temperature. We present evidence that points to a non-Weibull distribution for h-BN BD and use multi-scale physics-based simulations to extract the energetics of the defects that are precursors to BD, which happens to be boron vacancies.

Original language	English (US)
Pages (from-to)	1321-1324
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	8
DOIs	https://doi.org/10.1109/LED.2019.2923420
State	Published - 2019

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10.1109/LED.2019.2923420

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title = "Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics",

abstract = "Dielectric breakdown in 2-D insulating films for future logic device technology is not well understood yet, in contrast to the extensive insight we have in the breakdown of bulk dielectric films such as HfO2 and SiO2. In this study, we investigate the stochastic nature of breakdown (BD) in hexagonal boron nitride (h-BN) films using ramp voltage stress and examine the BD trends as a function of stress polarity, area and temperature. We present evidence that points to a non-Weibull distribution for h-BN BD and use multi-scale physics-based simulations to extract the energetics of the defects that are precursors to BD, which happens to be boron vacancies.",

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AU - Ranjan, A.

AU - Raghavan, N.

AU - Puglisi, F.M.

AU - Mei, S.

AU - Padovani, A.

AU - Larcher, L.

AU - Shubhakar, K.

AU - Pavan, P.

AU - Bosman, M.

AU - Zhang, Xixiang

AU - O’Shea, S.J.

AU - Pey, K.L.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2019

Y1 - 2019

N2 - Dielectric breakdown in 2-D insulating films for future logic device technology is not well understood yet, in contrast to the extensive insight we have in the breakdown of bulk dielectric films such as HfO2 and SiO2. In this study, we investigate the stochastic nature of breakdown (BD) in hexagonal boron nitride (h-BN) films using ramp voltage stress and examine the BD trends as a function of stress polarity, area and temperature. We present evidence that points to a non-Weibull distribution for h-BN BD and use multi-scale physics-based simulations to extract the energetics of the defects that are precursors to BD, which happens to be boron vacancies.

AB - Dielectric breakdown in 2-D insulating films for future logic device technology is not well understood yet, in contrast to the extensive insight we have in the breakdown of bulk dielectric films such as HfO2 and SiO2. In this study, we investigate the stochastic nature of breakdown (BD) in hexagonal boron nitride (h-BN) films using ramp voltage stress and examine the BD trends as a function of stress polarity, area and temperature. We present evidence that points to a non-Weibull distribution for h-BN BD and use multi-scale physics-based simulations to extract the energetics of the defects that are precursors to BD, which happens to be boron vacancies.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics

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