Boron-doped a-Si:Hc-Si interface passivation: Degradation mechanism

Stefaan De Wolf*, Michio Kondo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

116 Scopus citations


The authors report that for a-Si:Hc-Si heterostructure solar cell fabrication the presence of a boron-doped a-Si:H (p+) overlayer may cause H2 effusion from a (few nanometers) thin underlying intrinsic a-Si:H (i) film at moderate temperatures. This phenomenon is in agreement with losses in the electronic passivation quality of c-Sia-Si:H (i) a-Si:H (p+) structures occurring during low temperature (≤260 °C) postdeposition annealing. Consequently, it is argued that such passivation degradation is due to Si-H rupture in the a-Si:H (i) film, likely resulting in Si dangling bond defects, mediated by the presence of the doped layer.

Original languageEnglish (US)
Article number112109
JournalApplied Physics Letters
Issue number11
StatePublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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