TY - GEN
T1 - Blue Superluminescent Diode on c-Plane GaN Beyond Gigahertz Modulation Bandwidth for Visible Light Communication
AU - Alatawi, Abdullah
AU - Holguin Lerma, Jorge Alberto
AU - Kang, Chun Hong
AU - Shen, Chao
AU - Albadri, Abdulrahman M.
AU - Alyamani, Ahmed Y.
AU - Ng, Tien Khee
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2019/10/17
Y1 - 2019/10/17
N2 - Recently, GaN light-emitting diode (LED) and laser-diode (LD) have recently been developed for solid-state lighting (SSL) and visible light communication (VLC) [1, 2]. Superluminescent diode (SLD), which operates in the amplified spontaneous emission (ASE) mode offers further niche in SSL and VLC applications. The ASE (superluminescent) occurs when the optical feedback is suppressed, and thus inhibiting the onset of lasing. SLD offers speckles-free emission that is associated with LD, as well as exhibits shorter carrier lifetime since it operates in the ASE regime. The ASE results in a high modulation bandwidth and high data rate [3], as compared to LED, which operates in the spontaneous emission regime. In our previous work, we have demonstrated 560 MHz [4] and 800 MHz [3] of modulation bandwidth for semipolar-based SLDs. However, the expensive production cost of those substrates prevents them from wide-availability. Thus, here, we demonstrate a c-plane GaN-based SLD emitting at 442 nm with beyond GHz of bandwidth for simultaneous dual SSL-VLC technology.
AB - Recently, GaN light-emitting diode (LED) and laser-diode (LD) have recently been developed for solid-state lighting (SSL) and visible light communication (VLC) [1, 2]. Superluminescent diode (SLD), which operates in the amplified spontaneous emission (ASE) mode offers further niche in SSL and VLC applications. The ASE (superluminescent) occurs when the optical feedback is suppressed, and thus inhibiting the onset of lasing. SLD offers speckles-free emission that is associated with LD, as well as exhibits shorter carrier lifetime since it operates in the ASE regime. The ASE results in a high modulation bandwidth and high data rate [3], as compared to LED, which operates in the spontaneous emission regime. In our previous work, we have demonstrated 560 MHz [4] and 800 MHz [3] of modulation bandwidth for semipolar-based SLDs. However, the expensive production cost of those substrates prevents them from wide-availability. Thus, here, we demonstrate a c-plane GaN-based SLD emitting at 442 nm with beyond GHz of bandwidth for simultaneous dual SSL-VLC technology.
UR - http://hdl.handle.net/10754/660395
UR - https://ieeexplore.ieee.org/document/8872656/
UR - http://www.scopus.com/inward/record.url?scp=85074669370&partnerID=8YFLogxK
U2 - 10.1109/CLEOE-EQEC.2019.8872656
DO - 10.1109/CLEOE-EQEC.2019.8872656
M3 - Conference contribution
SN - 9781728104690
BT - 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
PB - IEEE
ER -