Abstract
Pure blue-light emission has been obtained from homoepitaxial ZnSe p-n junction light-emitting diodes (LEDs). Homoepitaxy is made on ZnSe substrates dry-etched by a BC13 plasma. High-quality p-n junctions consists; of N-doped p-type ZnSe formed by active-nitrogen doping and Cl-doped «-type ZnSe using ZnCl2 as a dopant source. Current- voltage characteristics of the LEDs exhibited good rectification properties. The peak energy of blue electroluminescence from the LEDs was 2.67 eV with a narrow full width at half-maximum of 49 meV.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3873-3875 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 30 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1991 |
| Externally published | Yes |
Keywords
- Active nitrogen
- Blue LED
- Homoepitaxy
- P-n junction
- P-type
- ZnSe
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy