Blue electroluminescence from ZnSe p-n junction LEDs

Kazuhiro Ohkawa; Akira Ueno; Tsuneo Mitsuyu

doi:10.7567/ssdm.1991.d-7-1

Blue electroluminescence from ZnSe p-n junction LEDs

Kazuhiro Ohkawa^*, Akira Ueno, Tsuneo Mitsuyu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Fabrication of homoepitaxial ZnSe p-n junction LEDs has been succeeded for the first time. Molecular-beam epitaxial growth of the homoepitaxial p-n layers has been performed on a dry-etched ZnSe substrate. The p-n junction consists of a N-doped ZnSe layer formed by active nitrogen doping and a Cl-doped ZnSe layer. The homoepitaxial ZnSe p-n junction LEDs have emitted pure blue light at room temperature. The peak energy of the blue electroluminescence was 2.67 eV with a narrow full width at half maximum of 49 meV.

Original language	English (US)
Pages	704-706
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.d-7-1
State	Published - 1991
Externally published	Yes
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: Aug 27 1991 → Aug 29 1991

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	08/27/91 → 08/29/91

ASJC Scopus subject areas

General Engineering

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10.7567/ssdm.1991.d-7-1

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@conference{1a7f0b303b00467ab0b38296fbe6c611,

title = "Blue electroluminescence from ZnSe p-n junction LEDs",

abstract = "Fabrication of homoepitaxial ZnSe p-n junction LEDs has been succeeded for the first time. Molecular-beam epitaxial growth of the homoepitaxial p-n layers has been performed on a dry-etched ZnSe substrate. The p-n junction consists of a N-doped ZnSe layer formed by active nitrogen doping and a Cl-doped ZnSe layer. The homoepitaxial ZnSe p-n junction LEDs have emitted pure blue light at room temperature. The peak energy of the blue electroluminescence was 2.67 eV with a narrow full width at half maximum of 49 meV.",

author = "Kazuhiro Ohkawa and Akira Ueno and Tsuneo Mitsuyu",

year = "1991",

doi = "10.7567/ssdm.1991.d-7-1",

language = "English (US)",

pages = "704--706",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - Blue electroluminescence from ZnSe p-n junction LEDs

AU - Ohkawa, Kazuhiro

AU - Ueno, Akira

AU - Mitsuyu, Tsuneo

PY - 1991

Y1 - 1991

N2 - Fabrication of homoepitaxial ZnSe p-n junction LEDs has been succeeded for the first time. Molecular-beam epitaxial growth of the homoepitaxial p-n layers has been performed on a dry-etched ZnSe substrate. The p-n junction consists of a N-doped ZnSe layer formed by active nitrogen doping and a Cl-doped ZnSe layer. The homoepitaxial ZnSe p-n junction LEDs have emitted pure blue light at room temperature. The peak energy of the blue electroluminescence was 2.67 eV with a narrow full width at half maximum of 49 meV.

AB - Fabrication of homoepitaxial ZnSe p-n junction LEDs has been succeeded for the first time. Molecular-beam epitaxial growth of the homoepitaxial p-n layers has been performed on a dry-etched ZnSe substrate. The p-n junction consists of a N-doped ZnSe layer formed by active nitrogen doping and a Cl-doped ZnSe layer. The homoepitaxial ZnSe p-n junction LEDs have emitted pure blue light at room temperature. The peak energy of the blue electroluminescence was 2.67 eV with a narrow full width at half maximum of 49 meV.

UR - http://www.scopus.com/inward/record.url?scp=0025867872&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1991.d-7-1

DO - 10.7567/ssdm.1991.d-7-1

M3 - Paper

AN - SCOPUS:0025867872

SP - 704

EP - 706

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Blue electroluminescence from ZnSe p-n junction LEDs

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