Blue cathodoluminescence from thulium implanted AlxGa1-xN and InxAl1-xN

I. S. Roqan; K. Lorenz; K. P. O'Donnell; C. Trager-Cowan; R. W. . Martin; I. M. Watson; E. Alves

doi:10.1016/j.spmi.2006.07.029

Blue cathodoluminescence from thulium implanted Al_xGa_1-xN and In_xAl_1-xN

I. S. Roqan^*, K. Lorenz, K. P. O'Donnell, C. Trager-Cowan, R. W. . Martin, I. M. Watson, E. Alves

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted Al_xGa_1-xN with different AlN contents (in the range 0 ≤ x ≤ 0.2) and from implanted In_xAl_1-xN with different InN contents (x = 0.13 and 0.19) close to the lattice match with GaN. The Tm³⁺ emission spectrum depends critically on the host material. The blue emission from Al_xGa_1-xN:Tm peaks in intensity for an AlN content of x ∼ 0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 ^{{ring operator}}C. The blue emission from In_0.13Al_0.87N:Tm, annealed at 1200 ^{{ring operator}}C, is more than ten times stronger than that from Al_xGa_1-xN:Tm, x ≤ 0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.

Original language	English (US)
Pages (from-to)	445-451
Number of pages	7
Journal	Superlattices and Microstructures
Volume	40
Issue number	4-6 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.spmi.2006.07.029
State	Published - Oct 2006
Externally published	Yes

Keywords

Cathodoluminescence
GaAlN
Implantation
InAlN
Rare earth

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.spmi.2006.07.029

Cite this

@article{f48104e971a54c6295eda87683abb56d,

title = "Blue cathodoluminescence from thulium implanted AlxGa1-xN and InxAl1-xN",

abstract = "Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted AlxGa1-xN with different AlN contents (in the range 0 ≤ x ≤ 0.2) and from implanted InxAl1-xN with different InN contents (x = 0.13 and 0.19) close to the lattice match with GaN. The Tm3+ emission spectrum depends critically on the host material. The blue emission from AlxGa1-xN:Tm peaks in intensity for an AlN content of x ∼ 0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 {ring operator}C. The blue emission from In0.13Al0.87N:Tm, annealed at 1200 {ring operator}C, is more than ten times stronger than that from AlxGa1-xN:Tm, x ≤ 0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.",

keywords = "Cathodoluminescence, GaAlN, Implantation, InAlN, Rare earth",

author = "Roqan, {I. S.} and K. Lorenz and O'Donnell, {K. P.} and C. Trager-Cowan and Martin, {R. W. .} and Watson, {I. M.} and E. Alves",

year = "2006",

month = oct,

doi = "10.1016/j.spmi.2006.07.029",

language = "English (US)",

volume = "40",

pages = "445--451",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4-6 SPEC. ISS.",

}

TY - JOUR

T1 - Blue cathodoluminescence from thulium implanted AlxGa1-xN and InxAl1-xN

AU - Roqan, I. S.

AU - Lorenz, K.

AU - O'Donnell, K. P.

AU - Trager-Cowan, C.

AU - Martin, R. W. .

AU - Watson, I. M.

AU - Alves, E.

PY - 2006/10

Y1 - 2006/10

N2 - Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted AlxGa1-xN with different AlN contents (in the range 0 ≤ x ≤ 0.2) and from implanted InxAl1-xN with different InN contents (x = 0.13 and 0.19) close to the lattice match with GaN. The Tm3+ emission spectrum depends critically on the host material. The blue emission from AlxGa1-xN:Tm peaks in intensity for an AlN content of x ∼ 0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 {ring operator}C. The blue emission from In0.13Al0.87N:Tm, annealed at 1200 {ring operator}C, is more than ten times stronger than that from AlxGa1-xN:Tm, x ≤ 0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.

AB - Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted AlxGa1-xN with different AlN contents (in the range 0 ≤ x ≤ 0.2) and from implanted InxAl1-xN with different InN contents (x = 0.13 and 0.19) close to the lattice match with GaN. The Tm3+ emission spectrum depends critically on the host material. The blue emission from AlxGa1-xN:Tm peaks in intensity for an AlN content of x ∼ 0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 {ring operator}C. The blue emission from In0.13Al0.87N:Tm, annealed at 1200 {ring operator}C, is more than ten times stronger than that from AlxGa1-xN:Tm, x ≤ 0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.

KW - Cathodoluminescence

KW - GaAlN

KW - Implantation

KW - InAlN

KW - Rare earth

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DO - 10.1016/j.spmi.2006.07.029

M3 - Article

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EP - 451

JO - Superlattices and Microstructures

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