Blue cathodoluminescence from thulium implanted AlxGa1-xN and InxAl1-xN

I. S. Roqan*, K. Lorenz, K. P. O'Donnell, C. Trager-Cowan, R. W. . Martin, I. M. Watson, E. Alves

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted AlxGa1-xN with different AlN contents (in the range 0 ≤ x ≤ 0.2) and from implanted InxAl1-xN with different InN contents (x = 0.13 and 0.19) close to the lattice match with GaN. The Tm3+ emission spectrum depends critically on the host material. The blue emission from AlxGa1-xN:Tm peaks in intensity for an AlN content of x ∼ 0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 {ring operator}C. The blue emission from In0.13Al0.87N:Tm, annealed at 1200 {ring operator}C, is more than ten times stronger than that from AlxGa1-xN:Tm, x ≤ 0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.

Original languageEnglish (US)
Pages (from-to)445-451
Number of pages7
JournalSuperlattices and Microstructures
Issue number4-6 SPEC. ISS.
StatePublished - Oct 2006
Externally publishedYes


  • Cathodoluminescence
  • GaAlN
  • Implantation
  • InAlN
  • Rare earth

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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