Abstract
Polymorphism, the ability for a given material to adopt multiple crystalline packing states, is a powerful approach for investigating how changes in molecular packing influence charge transport within organic semiconductors. In this study, a new “thin film” polymorph of the high-performance, p-type small molecule N-octyldiisopropylsilyl acetylene bistetracene (BT) is isolated and characterized. Structural changes in the BT films are monitored using static and in situ grazing-incidence X-ray diffraction. The diffraction data, combined with simulation and crystallographic refinement calculations, show the molecular packing of the “thin film” polymorph transforms from a slipped 1D π-stacking motif to a highly oriented and crystalline film upon solvent vapor annealing with a 2D brick-layer π-stacking arrangement, similar to the so-called “bulk” structure observed in single crystals. Charge transport is characterized as a function of vapor annealing, grain orientation, and temperature. Demonstrating that mobility increases by three orders of magnitude upon solvent vapor annealing and displays a differing temperature-dependent mobility behavior.
Original language | English (US) |
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Article number | 1701607 |
Journal | Advanced Materials Interfaces |
Volume | 5 |
Issue number | 9 |
DOIs | |
State | Published - May 9 2018 |
Bibliographical note
Publisher Copyright:© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
- bistetracene
- organic semiconductors
- polymorphism
- solvent vapor annealing
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering