Bilayer HfO2/Sb2O3 gate dielectric stacks for transistors with 2D semiconducting channels

Mario Lanza

doi:10.1016/j.scib.2023.10.007

Bilayer HfO₂/Sb₂O₃ gate dielectric stacks for transistors with 2D semiconducting channels

Mario Lanza

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Pages (from-to)	2684-2686
Number of pages	3
Journal	Science Bulletin
Volume	68
Issue number	22
DOIs	https://doi.org/10.1016/j.scib.2023.10.007
State	Published - Nov 30 2023

ASJC Scopus subject areas

General

Access to Document

10.1016/j.scib.2023.10.007

Cite this

@article{23c2b0209c2c4a0d92c375277c25e730,

title = "Bilayer HfO2/Sb2O3 gate dielectric stacks for transistors with 2D semiconducting channels",

author = "Mario Lanza",

year = "2023",

month = nov,

day = "30",

doi = "10.1016/j.scib.2023.10.007",

language = "English (US)",

volume = "68",

pages = "2684--2686",

journal = "Science Bulletin",

issn = "2095-9273",

publisher = "Elsevier B.V.",

number = "22",

}

TY - JOUR

T1 - Bilayer HfO2/Sb2O3 gate dielectric stacks for transistors with 2D semiconducting channels

AU - Lanza, Mario

PY - 2023/11/30

Y1 - 2023/11/30

UR - http://www.scopus.com/inward/record.url?scp=85174684948&partnerID=8YFLogxK

U2 - 10.1016/j.scib.2023.10.007

DO - 10.1016/j.scib.2023.10.007

M3 - Comment/debate

C2 - 37858409

AN - SCOPUS:85174684948

SN - 2095-9273

VL - 68

SP - 2684

EP - 2686

JO - Science Bulletin

JF - Science Bulletin

IS - 22

ER -

Bilayer HfO2/Sb2O3 gate dielectric stacks for transistors with 2D semiconducting channels

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this

Bilayer HfO₂/Sb₂O₃ gate dielectric stacks for transistors with 2D semiconducting channels