Bi2O2Se: A rising star for semiconductor devices

Xiang Ding, Menglu Li, Pei Chen, Yan Zhao, Mei Zhao, Huaqian Leng, Yong Wang, Sharafat Ali, Fazal Raziq, Xiaoqiang Wu, Haiyan Xiao, Xiaotao Zu, Qingyuan Wang, Ajayan Vinu, Jiabao Yi, Liang Qiao

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi2O2Se) has become a rising star as a novel quasi-2D material, possessing high symmetry, adjustable electronic structure, ultra-high electron mobility, persistent quantum oscillations, unique defects, strong spin-orbital coupling, natural oxide layers, excellent stability, and marvelous optoelectronic performance. These characteristics will help to break through existing technical barriers for applications such as field-effect transistors and photodetectors. Its unique crystal structure and suitable lattice parameters allow it to grow on lattice-matched (SrTiO3 and LaAlO3) and unmatched (mica and SiO2) substrates, establishing a link between traditional epitaxy and emerging van der Waals epitaxy. This review aims to provide an overview of this promising semiconductor from a fundamental structure, physics, and physical properties perspective. We especially pay attention to the correlation of electronic structure to various physical properties and material performance. We also identify current problems and challenges regarding the fundamental properties of this material.
Original languageEnglish (US)
Pages (from-to)4274-4314
Number of pages41
JournalMatter
Volume5
Issue number12
DOIs
StatePublished - Dec 7 2022
Externally publishedYes

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Generated from Scopus record by KAUST IRTS on 2023-09-21

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