TY - JOUR
T1 - Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors
AU - Dhoot, Anoop S.
AU - Yuen, Jonathan D.
AU - Heeney, Martin
AU - McCulloch, Iain
AU - Moses, Daniel
AU - Heeger, Alan J.
N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14
PY - 2006/8/8
Y1 - 2006/8/8
N2 - We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices. © 2006 by The National Academy of Sciences of the USA.
AB - We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices. © 2006 by The National Academy of Sciences of the USA.
UR - https://pnas.org/doi/full/10.1073/pnas.0605033103
UR - http://www.scopus.com/inward/record.url?scp=33747058498&partnerID=8YFLogxK
U2 - 10.1073/pnas.0605033103
DO - 10.1073/pnas.0605033103
M3 - Article
C2 - 16873547
SN - 0027-8424
VL - 103
SP - 11834
EP - 11837
JO - Proceedings of the National Academy of Sciences of the United States of America
JF - Proceedings of the National Academy of Sciences of the United States of America
IS - 32
ER -