Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Anoop S. Dhoot, Jonathan D. Yuen, Martin Heeney, Iain McCulloch, Daniel Moses, Alan J. Heeger*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

155 Scopus citations


We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices.

Original languageEnglish (US)
Pages (from-to)11834-11837
Number of pages4
JournalProceedings of the National Academy of Sciences of the United States of America
Issue number32
StatePublished - Aug 8 2006
Externally publishedYes


  • Conjugated polymer
  • Electronic transport

ASJC Scopus subject areas

  • General

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