Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers

Hengli Duan; Peng Guo; Chao Wang; Hao Tan; Wei Hu; Wensheng Yan; Chao Ma; Liang Cai; Li Song; Wenhua Zhang; Zhihu Sun; Linjun Wang; Wenbo Zhao; Yuewei Yin; Xiaoguang Li; Shiqiang Wei

doi:10.1038/s41467-019-09531-0

Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers

Hengli Duan, Peng Guo, Chao Wang, Hao Tan, Wei Hu, Wensheng Yan^*, Chao Ma, Liang Cai, Li Song, Wenhua Zhang, Zhihu Sun, Linjun Wang, Wenbo Zhao, Yuewei Yin, Xiaoguang Li, Shiqiang Wei

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS ₂ , where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS ₂ monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices.

Original language	English (US)
Article number	1584
Journal	Nature Communications
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41467-019-09531-0
State	Published - Dec 1 2019

Bibliographical note

Funding Information:
This work was financially supported by the National Key Research and Development Program of China (No. 2016YFA0300103, 2017YFA0402800), National Natural Science Foundation of China (Grants No.11435012, U1632263, 11775225, 11604341, 51790491, and 21533007), and the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (11621063). The authors would like to thank BSRF, SSRF and NSRL for the synchrotron beamtime.

Publisher Copyright:
© 2019, The Author(s).

ASJC Scopus subject areas

General Chemistry
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy

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title = "Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers",

abstract = " Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS 2 , where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS 2 monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices.",

author = "Hengli Duan and Peng Guo and Chao Wang and Hao Tan and Wei Hu and Wensheng Yan and Chao Ma and Liang Cai and Li Song and Wenhua Zhang and Zhihu Sun and Linjun Wang and Wenbo Zhao and Yuewei Yin and Xiaoguang Li and Shiqiang Wei",

note = "Funding Information: This work was financially supported by the National Key Research and Development Program of China (No. 2016YFA0300103, 2017YFA0402800), National Natural Science Foundation of China (Grants No.11435012, U1632263, 11775225, 11604341, 51790491, and 21533007), and the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (11621063). The authors would like to thank BSRF, SSRF and NSRL for the synchrotron beamtime. Publisher Copyright: {\textcopyright} 2019, The Author(s).",

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AU - Duan, Hengli

AU - Guo, Peng

AU - Wang, Chao

AU - Tan, Hao

AU - Hu, Wei

AU - Yan, Wensheng

AU - Ma, Chao

AU - Cai, Liang

AU - Song, Li

AU - Zhang, Wenhua

AU - Sun, Zhihu

AU - Wang, Linjun

AU - Zhao, Wenbo

AU - Yin, Yuewei

AU - Li, Xiaoguang

AU - Wei, Shiqiang

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PY - 2019/12/1

Y1 - 2019/12/1

N2 - Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS 2 , where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS 2 monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices.

AB - Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS 2 , where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS 2 monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices.

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Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers

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