Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes

Wei Guo; Animesh Banerjee; Meng Zhang; Pallab Bhattacharya

doi:10.1063/1.3579143

Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes

Wei Guo, Animesh Banerjee, Meng Zhang, Pallab Bhattacharya

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics.

Original language	English (US)
Pages (from-to)	183116
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3579143
State	Published - May 6 2011
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): N012509-00
Acknowledgements: The work was supported by KAUST under Grant No. N012509-00.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{e54c4db74f7d4241ba3977fbc08afaf8,

title = "Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes",

abstract = "The barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. {\textcopyright} 2011 American Institute of Physics.",

author = "Wei Guo and Animesh Banerjee and Meng Zhang and Pallab Bhattacharya",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): N012509-00 Acknowledgements: The work was supported by KAUST under Grant No. N012509-00. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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AU - Guo, Wei

AU - Banerjee, Animesh

AU - Zhang, Meng

AU - Bhattacharya, Pallab

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): N012509-00 Acknowledgements: The work was supported by KAUST under Grant No. N012509-00. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2011/5/6

Y1 - 2011/5/6

N2 - The barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics.

AB - The barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics.

UR - http://hdl.handle.net/10754/597644

UR - http://aip.scitation.org/doi/10.1063/1.3579143

UR - http://www.scopus.com/inward/record.url?scp=79957484873&partnerID=8YFLogxK

U2 - 10.1063/1.3579143

DO - 10.1063/1.3579143

M3 - Article

SN - 0003-6951

VL - 98

SP - 183116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes

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