Abstract
The optical energy gap of as-grown MoS2 flakes from chemical vapor deposition can be modulated from 1.86 eV (667 nm) to 1.57 eV (790 nm) by a vapor phase selenization process. This approach, replacing one chalcogen by another in the gas phase, is promising in modulating the optical and electronic properties of other transition metal dichalcogenide monolayers.
Original language | English (US) |
---|---|
Pages (from-to) | 2589-2594 |
Number of pages | 6 |
Journal | Small |
Volume | 10 |
Issue number | 13 |
DOIs | |
State | Published - Jul 2014 |
Keywords
- MoS2
- band gap tuning
- layered materials
- transition metal dichalcogenides
- two-dimensional materials
ASJC Scopus subject areas
- General Chemistry
- Engineering (miscellaneous)
- Biotechnology
- General Materials Science
- Biomaterials