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Band-edge effective work functions by controlling HfO2/TiN interfacial composition for gate-last CMOS
C. L. Hinkle*, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. J. Chambers, J. B. Shaw
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
3
Scopus
citations